IRFH5306 Todos los transistores

PD - 97429 IRFH5306PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 8.1 m (@VGS = 10V) Qg (typical) 7.8 nC RG (typical) 1.4 ID 44 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 7.8nC) Lower switching losses Low thermal resistance to PCB (

IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (

IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 1.85 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (

IRMOSFET IRFH5300PbF VDSS 30 V RDS(on) max 1.4 m (@ VGS = 10V) Qg (typical) 50 nC Rg (typical) 1.3 ID 336 A PQFN 5X6 mm (@TC (Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

PD -97467 IRFH5303PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 4.2 m (@VGS = 10V) Qg (typical) 15 nC RG (typical) 0.6 ID 82 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Control MOSFET for high frequency buck converters Features and Benefits Benefits Features Low charge (typical 15nC) Lower Switching Losses Low Rg (typical 0.6 ) Lower Switching Losses Low Therm

PD -97410A IRFH5300PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 1.4 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon ( 1.4m ) Lower Conduction Losses Low The

IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (

PD -97447 IRFH5304PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 4.5 m (@VGS = 10V) Qg (typical) 16 nC ID 79 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC) Lower Switching Losses Low Thermal Resistance to PCB (

PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features

IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 1.85 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (

IRFH5302DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.5 m (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (