IRFH5306 Todos los transistores

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IRFH5306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5306

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0081 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5306 Datasheet (PDF)

1.1. irfh5306pbf.pdf Size:255K _international_rectifier

IRFH5306
IRFH5306

IRFH5306PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 8.1 mΩ (@VGS = 10V) Qg (typical) 7.8 nC RG (typical) 1.4 Ω ID 44 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 7.8nC) Lower switching losses Low thermal resistance to PCB (< 4.9°C/W) Increased power density 100% Rg te

3.1. irfh5302.pdf Size:209K _international_rectifier

IRFH5306
IRFH5306

PD -97156 IRFH5302PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 2.1 mΩ (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 Ω ID 100 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ≤ Ω

3.2. irfh5301pbf.pdf Size:253K _international_rectifier

IRFH5306
IRFH5306

IRFH5301PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.85 mΩ (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (<1.85

3.3. irfh5302dpbf.pdf Size:258K _international_rectifier

IRFH5306
IRFH5306

IRFH5302DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 2.5 mΩ (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<2.5mΩ) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltag

3.4. irfh5304pbf.pdf Size:254K _international_rectifier

IRFH5306
IRFH5306

IRFH5304PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.5 mΩ (@VGS = 10V) Qg (typical) 16 nC ID 79 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC) Lower Switching Losses Low Thermal Resistance to PCB (<2.7°C/W) Increased Power Density 100% Rg tested Increased Reliab

3.5. irfh5300pbf.pdf Size:274K _international_rectifier

IRFH5306
IRFH5306

IRFH5300PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.4 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (≤ 1.4mΩ) Lower Conduction Losses Low Thermal Resista

3.6. irfh5303pbf.pdf Size:344K _international_rectifier

IRFH5306
IRFH5306

PD -97467 IRFH5303PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.2 m (@VGS = 10V) Qg (typical) 15 nC RG (typical) 0.6 ID 82 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Benefits Features Low charge (typical 15nC) Lower Switching Losses Low Rg (typical 0.6 Ω) Lower Switching Losses Low Therm

Otros transistores... IRFH5250D , IRFH5255 , IRFH5300 , IRFH5301 , IRFH5302 , IRFH5302D , IRFH5303 , IRFH5304 , IRF9530 , IRFH5406 , IRFH6200 , IRFH7914 , IRFH7921 , IRFH7932 , IRFH7934 , IRFH7936 , IRFH8318 .

 


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