IRFH5306 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFH5306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: PQFN5X6

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IRFH5306 Datasheet (PDF)

..1. Size:205K international rectifier
irfh5306pbf.pdf pdf_icon

PD - 97429IRFH5306PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 8.1 m(@VGS = 10V)Qg (typical) 7.8 nCRG (typical) 1.4 ID 44 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications Control MOSFET for buck convertersFeatures and BenefitsFeatures BenefitsLow charge (typical 7.8nC) Lower switching lossesLow thermal resistance to PCB (

7.1. Size:240K 1
irfh5302trpbf.pdf pdf_icon

IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (

7.2. Size:236K 1
irfh5301trpbf.pdf pdf_icon

IRFH5301PbFHEXFET Power MOSFETVDS30 VRDS(on) max 1.85 m(@VGS = 10V)Qg (typical)37 nCRG (typical)1.5 ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (

7.3. Size:824K 1
irfh5300trpbf.pdf pdf_icon

IRMOSFET IRFH5300PbF VDSS 30 V RDS(on) max 1.4 m(@ VGS = 10V) Qg (typical) 50 nC Rg (typical) 1.3 ID 336 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

7.4. Size:341K international rectifier
irfh5303pbf.pdf pdf_icon

PD -97467IRFH5303PbFHEXFET Power MOSFETVDS30 VRDS(on) max 4.2 m(@VGS = 10V)Qg (typical) 15nCRG (typical) 0.6ID 82 A(@Tc(Bottom) = 25C) PQFN 5X6 mmApplications Control MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow charge (typical 15nC) Lower Switching LossesLow Rg (typical 0.6 ) Lower Switching LossesLow Therm

7.5. Size:272K international rectifier
irfh5300pbf.pdf pdf_icon

PD -97410AIRFH5300PbFHEXFET Power MOSFETVDS30 VRDS(on) max 1.4 m(@VGS = 10V)Qg (typical) 50nCRG (typical) 1.3ID 100 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon ( 1.4m) Lower Conduction LossesLow The

7.6. Size:340K international rectifier
irfh5304pbf.pdf pdf_icon

PD -97447IRFH5304PbFHEXFET Power MOSFETVDS30 VRDS(on) max 4.5 m(@VGS = 10V)Qg (typical) 16nCID 79 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications Control MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesLow charge (typical 16nC) Lower Switching LossesLow Thermal Resistance to PCB (

7.7. Size:209K international rectifier
irfh5302.pdf pdf_icon

PD -97156IRFH5302PbFHEXFET Power MOSFETVDS30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29nCRG (typical) 1.6ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures

7.8. Size:304K international rectifier
irfh5301pbf.pdf pdf_icon

PD -96276IRFH5301PbFHEXFET Power MOSFETVDS30 VRDS(on) max 1.85 m(@VGS = 10V)Qg (typical)37 nCRG (typical)1.5 ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow

7.9. Size:258K international rectifier
irfh5302dpbf.pdf pdf_icon

IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (

7.10. Size:240K infineon
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