IRFH7914 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7914
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
Encapsulados: PQFN5X6
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IRFH7914 datasheet
irfh7914pbf.pdf
IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-
irfh7914trpbf.pdf
IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-
irfh7911pbf.pdf
IRFH7911PbF HEXFET Power MOSFET Q1 Q2 VDS 30 30 V RDS(on) max 8.6 3.0 m (@VGS = 10V) Qg (typical) 8.3 34 nC ID 13 28 A (@TA = 25 C) Dual PQFN 5X6 mm Applications Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low charge control MOSF
irfh7934trpbf.pdf
IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L
Otros transistores... IRFH5301 , IRFH5302 , IRFH5302D , IRFH5303 , IRFH5304 , IRFH5306 , IRFH5406 , IRFH6200 , RFP50N06 , IRFH7921 , IRFH7932 , IRFH7934 , IRFH7936 , IRFH8318 , IRFH8324 , IRFH8325 , IRFH8330 .
History: IRFH8334
History: IRFH8334
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