IRFH7914 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7914
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de IRFH7914 MOSFET
IRFH7914 Datasheet (PDF)
irfh7914pbf.pdf

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-
irfh7914trpbf.pdf

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-
irfh7911pbf.pdf

IRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m(@VGS = 10V)Qg (typical)8.3 34 nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low charge control MOSF
irfh7934trpbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L
Otros transistores... IRFH5301 , IRFH5302 , IRFH5302D , IRFH5303 , IRFH5304 , IRFH5306 , IRFH5406 , IRFH6200 , SKD502T , IRFH7921 , IRFH7932 , IRFH7934 , IRFH7936 , IRFH8318 , IRFH8324 , IRFH8325 , IRFH8330 .
History: FDWS86368-F085 | ST3421SRG | NCEP02525G
History: FDWS86368-F085 | ST3421SRG | NCEP02525G



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2n3392 | 2n2369a | 2sc733 | a933 transistor | d209l | irfb4321 | 2n333 | c3852