IRFH7932 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFH7932
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 830 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH7932

IRFH7932 Datasheet (PDF)

..1. Size:272K international rectifier
irfh7932pbf.pdf

PD - 96140AIRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested

..2. Size:316K infineon
irfh7932pbf.pdf

IRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested for RGDl

7.1. Size:260K 1
irfh7934trpbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L

7.2. Size:266K international rectifier
irfh7936pbf.pdf

PD -97337AIRFH7936PbFApplications HEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated4.8m@VGS = 10V30V 17nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Teste

7.3. Size:310K international rectifier
irfh7934pbf.pdf

PD -97151IRFH7934PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) max Qgused for Notebook Processor Powerl Control MOSFET for Isolated DC-DC30V 3.5m @VGS = 10V 20nCConverters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100%

7.4. Size:260K infineon
irfh7934pbf.pdf