IRFL024Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFL024Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 68 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0575 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de IRFL024Z MOSFET
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IRFL024Z datasheet
irfl024zpbf.pdf
PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 57.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.1A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistan
irfl024z.pdf
PD - 95817 IRFL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 57.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 5.1A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest process
irfl024n.pdf
PD - 91861A IRFL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.075 Fast Switching G Fully Avalanche Rated ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
irfl024npbf.pdf
PD - 95339 IRFL024NPbF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.075 l Fully Avalanche Rated G l Lead-Free ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist
Otros transistores... IRFI4227 , IRFI4229 , IRFI4321 , IRFI4410Z , IRFI4410ZG , IRFIB41N15D , IRFIZ48V , IRFL014N , K2611 , IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP250N , IRFP260M .
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