IRFL024Z MOSFET Datasheet: N-Ch, 55V, 5.1A. Full specification with pinout and replacement list

IRFL024Z Specs and Replacement

Type Designator: IRFL024Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0575 Ohm

Package: SOT223

IRFL024Z substitution

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IRFL024Z datasheet

..1. Size:264K international rectifier
irfl024zpbf.pdf pdf_icon

PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 57.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.1A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistan... See More ⇒

..2. Size:269K international rectifier
irfl024z.pdf pdf_icon

PD - 95817 IRFL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 57.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 5.1A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest process... See More ⇒

7.1. Size:110K international rectifier
irfl024n.pdf pdf_icon

PD - 91861A IRFL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.075 Fast Switching G Fully Avalanche Rated ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area... See More ⇒

7.2. Size:140K international rectifier
irfl024npbf.pdf pdf_icon

PD - 95339 IRFL024NPbF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.075 l Fully Avalanche Rated G l Lead-Free ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist... See More ⇒