IRFP2907 Todos los transistores

 

IRFP2907 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP2907
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 470 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 209 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 190 nS
   Conductancia de drenaje-sustrato (Cd): 2100 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
   Paquete / Cubierta: TO247AC

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IRFP2907 Datasheet (PDF)

 ..1. Size:115K  international rectifier
irfp2907.pdf

IRFP2907
IRFP2907

PD -93906AIRFP2907AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsD Integrated Starter AlternatorVDSS = 75V 42 Volts Automotive Electrical SystemsBenefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-ResistanceID = 209AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxDescript

 ..2. Size:218K  international rectifier
irfp2907pbf.pdf

IRFP2907
IRFP2907

PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design

 ..3. Size:218K  infineon
irfp2907pbf.pdf

IRFP2907
IRFP2907

PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design

 ..4. Size:241K  inchange semiconductor
irfp2907.pdf

IRFP2907
IRFP2907

isc N-Channel MOSFET Transistor IRFP2907IIRFP2907FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

 0.1. Size:286K  international rectifier
auirfp2907z.pdf

IRFP2907
IRFP2907

PD - 97550AUIRFP2907ZAUTOMOTIVE GRADEHEXFET Power MOSFETDFeaturesV(BR)DSS75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) max.4.5mG 175C Operating Temperature Fast SwitchingID170AS Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for

 0.2. Size:221K  international rectifier
auirfp2907.pdf

IRFP2907
IRFP2907

PD -97692AAUTOMOTIVE GRADEAUIRFP2907HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.3.6ml Dynamic dV/dT Ratingl 175C Operating Temperaturemax 4.5mGl Fast SwitchingID (Silicon Limited)209Al Fully Avalanche RatedSID (Package Limited)90Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, R

 0.3. Size:276K  international rectifier
irfp2907zpbf.pdf

IRFP2907
IRFP2907

PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan

 0.4. Size:276K  infineon
irfp2907zpbf.pdf

IRFP2907
IRFP2907

PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan

 0.5. Size:242K  inchange semiconductor
irfp2907z.pdf

IRFP2907
IRFP2907

isc N-Channel MOSFET Transistor IRFP2907ZIIRFP2907ZFEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

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