IRFP2907 - описание и поиск аналогов

PD -93906A IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications D Integrated Starter Alternator VDSS = 75V 42 Volts Automotive Electrical Systems Benefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-Resistance ID = 209AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Descript

PD -95050C IRFP2907PbF HEXFET Power MOSFET Typical Applications D Telecom applications requiring soft start VDSS = 75V Benefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-Resistance Dynamic dv/dt Rating ID = 209A S 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design

isc N-Channel MOSFET Transistor IRFP2907 IIRFP2907 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET Power MOSFET D Features V(BR)DSS 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 4.5m G 175 C Operating Temperature Fast Switching ID 170A S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for

PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 3.6m l Dynamic dV/dT Rating l 175 C Operating Temperature max 4.5m G l Fast Switching ID (Silicon Limited) 209A l Fully Avalanche Rated S ID (Package Limited) 90A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, R

PD - 95480B IRFP2907ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 90A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistan

isc N-Channel MOSFET Transistor IRFP2907Z IIRFP2907Z FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-