IRFP4229 Todos los transistores

 

IRFP4229 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP4229

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 310 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 44 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 72 nC

Resistencia drenaje-fuente RDS(on): 0.046 Ohm

Empaquetado / Estuche: TO247AC

Búsqueda de reemplazo de MOSFET IRFP4229

 

IRFP4229 Datasheet (PDF)

1.1. irfp4229pbf.pdf Size:301K _upd-mosfet

IRFP4229
IRFP4229

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 87 A and Pass Switch Applications

3.1. irfp4227pbf.pdf Size:296K _upd-mosfet

IRFP4229
IRFP4229

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications

3.2. irfp4228pbf.pdf Size:300K _upd-mosfet

IRFP4229
IRFP4229

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Recovery and Pass

 3.3. irfp4227pbf.pdf Size:212K _inchange_semiconductor

IRFP4229
IRFP4229

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


IRFP4229
  IRFP4229
  IRFP4229
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WMH07N65C2 | WMG07N65C2 | WMP07N65C2 | WMO07N65C2 | WMM07N65C2 | WML07N65C2 | TP0610T | ME7170-G | LTP70N06 | HY1707PM | HY1707PS | HY1707MF | HY1707I | HY1707B | HY1707M |

 

 

 
Back to Top