All MOSFET. IRFP4229 Datasheet

 

IRFP4229 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP4229

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 44 A

Total Gate Charge (Qg): 72 nC

Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm

Package: TO247AC

IRFP4229 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP4229 Datasheet (PDF)

0.1. irfp4229pbf.pdf Size:301K _international_rectifier

IRFP4229
IRFP4229

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 87 A and Pass Switch Applications

0.2. irfp4229.pdf Size:242K _inchange_semiconductor

IRFP4229
IRFP4229

isc N-Channel MOSFET Transistor IRFP4229,IIRFP4229 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤46mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIM

 7.1. irfp4227pbf.pdf Size:296K _international_rectifier

IRFP4229
IRFP4229

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications

7.2. irfp4228pbf.pdf Size:300K _international_rectifier

IRFP4229
IRFP4229

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Recovery and Pass

 7.3. irfp4227pbf.pdf Size:212K _inchange_semiconductor

IRFP4229
IRFP4229

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

7.4. irfp4227.pdf Size:242K _inchange_semiconductor

IRFP4229
IRFP4229

isc N-Channel MOSFET Transistor IRFP4227,IIRFP4227 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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