IRFP4310Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP4310Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 280 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 134 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 490 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: TO247AC
Búsqueda de reemplazo de IRFP4310Z MOSFET
IRFP4310Z Datasheet (PDF)
irfp4310zpbf.pdf

PD - 97123AIRFP4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)134A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dt
irfp4310z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4310ZIIRFP4310ZFEATURESStatic drain-source on-resistance:RDS(on)6.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUnin
auirfp4310z.pdf

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom
irfp4321pbf.pdf

PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m:RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery
Otros transistores... IRFP3415 , IRFP3703 , IRFP4004 , IRFP4110 , IRFP4227 , IRFP4229 , IRFP4232 , IRFP4242 , IRF640N , IRFP4321 , IRFP4332 , IRFP4368 , IRFP4410Z , IRFP4468 , IRFP4568 , IRFP4668 , IRFP4710 .
History: IRF7329PBF | SFP036N80C3 | SM1C02NSF | IPP039N04LG | SRT08N015HTLTR-G | IRFB9N60APBF | SFG110N12FF
History: IRF7329PBF | SFP036N80C3 | SM1C02NSF | IPP039N04LG | SRT08N015HTLTR-G | IRFB9N60APBF | SFG110N12FF



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