IRFP4310Z - описание и поиск аналогов

PD - 97123A IRFP4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Unin

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175 C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom

PD - 97106 IRFP4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m RDS(on) typ. Benefits max. 15.5m l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 C and Pass Switch Applications l Low QG for

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46m l Hard Switched and High Frequency Circuits max. 1.85m G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332 IIRFP4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Swi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321 IIRFP4321 FEATURES Static drain-source on-resistance RDS(on) 15.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Motion Control Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4368 IIRFP4368 FEATURES Static drain-source on-resistance RDS(on) 1.85m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninter