IRFP4332 Todos los transistores

 

IRFP4332 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP4332

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 360 W

Tensión drenaje-fuente |Vds|: 250 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 57 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 99 nC

Resistencia drenaje-fuente RDS(on): 0.033 Ohm

Empaquetado / Estuche: TO247AC

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IRFP4332 Datasheet (PDF)

..1. irfp4332.pdf Size:242K _inchange_semiconductor

IRFP4332
IRFP4332

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4332IIRFP4332FEATURESStatic drain-source on-resistance:RDS(on)33mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast Swi

0.1. irfp4332pbf.pdf Size:298K _international_rectifier

IRFP4332
IRFP4332

PD - 97100BIRFP4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryTJ max 175 C and Pass Switch Applicationsl Low QG for

0.2. irfp4332pbf.pdf Size:298K _infineon

IRFP4332
IRFP4332

PD - 97100BIRFP4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryTJ max 175 C and Pass Switch Applicationsl Low QG for

 

 8.1. irfp4321pbf.pdf Size:291K _international_rectifier

IRFP4332
IRFP4332

PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m:RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery

8.2. irfp4310zpbf.pdf Size:299K _international_rectifier

IRFP4332
IRFP4332

PD - 97123AIRFP4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)134A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dt

 8.3. irfp4368pbf.pdf Size:277K _international_rectifier

IRFP4332
IRFP4332

PD - 97322IRFP4368PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 75Vl High Speed Power SwitchingRDS(on) typ. 1.46ml Hard Switched and High Frequency Circuits max. 1.85mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rugge

8.4. irfp430-433 irf830-833.pdf Size:345K _samsung

IRFP4332
IRFP4332

 8.5. irfp4321pbf.pdf Size:291K _infineon

IRFP4332
IRFP4332

PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m:RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery

8.6. irfp4310zpbf.pdf Size:299K _infineon

IRFP4332
IRFP4332

PD - 97123AIRFP4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)134A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dt

8.7. irfp4368pbf.pdf Size:277K _infineon

IRFP4332
IRFP4332

PD - 97322IRFP4368PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 75Vl High Speed Power SwitchingRDS(on) typ. 1.46ml Hard Switched and High Frequency Circuits max. 1.85mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rugge

8.8. irfp4310z.pdf Size:244K _inchange_semiconductor

IRFP4332
IRFP4332

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4310ZIIRFP4310ZFEATURESStatic drain-source on-resistance:RDS(on)6.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUnin

8.9. irfp4368.pdf Size:244K _inchange_semiconductor

IRFP4332
IRFP4332

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4368IIRFP4368FEATURESStatic drain-source on-resistance:RDS(on)1.85mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninter

8.10. irfp4321.pdf Size:243K _inchange_semiconductor

IRFP4332
IRFP4332

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4321IIRFP4321FEATURESStatic drain-source on-resistance:RDS(on)15.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONMotion Control ApplicationsHigh Efficiency Synchronous Rectification in SMPSUninterruptible

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFZ48N , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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