All MOSFET. IRFP4332 Datasheet

 

IRFP4332 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP4332

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 360 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 99 nC

Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm

Package: TO247AC

IRFP4332 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP4332 Datasheet (PDF)

1.1. irfp4332pbf.pdf Size:298K _upd-mosfet

IRFP4332
IRFP4332

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

4.1. irfp4321pbf.pdf Size:291K _upd-mosfet

IRFP4332
IRFP4332

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

4.2. irfp4310zpbf.pdf Size:299K _upd-mosfet

IRFP4332
IRFP4332

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

 4.3. irfp4368pbf.pdf Size:277K _upd-mosfet

IRFP4332
IRFP4332

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46mΩ l Hard Switched and High Frequency Circuits max. 1.85mΩ G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

4.4. irfp430-433 irf830-833.pdf Size:345K _samsung

IRFP4332
IRFP4332



Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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