IRFPS3810 Todos los transistores

 

IRFPS3810 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS3810

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 441 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 141 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 260 nC

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO274AA_Super247

Búsqueda de reemplazo de MOSFET IRFPS3810

 

IRFPS3810 Datasheet (PDF)

1.1. irfps3810pbf.pdf Size:173K _upd-mosfet

IRFPS3810
IRFPS3810

PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.009Ω l Fast Switching G l Fully Avalanche Rated ID = 170A† l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

1.2. irfps3810.pdf Size:115K _international_rectifier

IRFPS3810
IRFPS3810

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.009? Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 2.1. irfps3815pbf.pdf Size:131K _upd-mosfet

IRFPS3810
IRFPS3810

PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.015Ω l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

2.2. irfps3815.pdf Size:101K _international_rectifier

IRFPS3810
IRFPS3810

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.015? Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 
Back to Top

 


IRFPS3810
  IRFPS3810
  IRFPS3810
  IRFPS3810
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top