IRFPS3810 - описание и поиск аналогов

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 170A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.015 l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness