IRFR24N15D Todos los transistores

 

IRFR24N15D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR24N15D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: DPAK

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IRFR24N15D datasheet

 ..1. Size:276K  international rectifier
 irfr24n15dpbf.pdf pdf_icon

IRFR24N15D

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch

 ..2. Size:276K  international rectifier
 irfr24n15dpbf irfu24n15dpbf.pdf pdf_icon

IRFR24N15D

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch

 ..3. Size:108K  international rectifier
 irfr24n15d.pdf pdf_icon

IRFR24N15D

PD - 94392 IRFR24N15D SMPS MOSFET IRFU24N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 95m 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRF

 ..4. Size:241K  inchange semiconductor
 irfr24n15d.pdf pdf_icon

IRFR24N15D

isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15D FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15

MOSTRAR MÁS

Otros transistores... IRFR13N15D , IRFR13N20D , IRFR15N20D , IRFR18N15D , IRFR220N , IRFR2307Z , IRFR2405 , IRFR2407 , K3569 , IRFR2607Z , IRFR2905Z , IRFR3410 , IRFR3411 , IRFR3504Z , IRFR3505 , IRFR3518 , IRFR3607 .

 

 

 


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