IRFR24N15D - описание и поиск аналогов

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch

PD - 94392 IRFR24N15D SMPS MOSFET IRFU24N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 95m 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRF

isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15D FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15

PD-95033A IRFR2407PbF IRFU2407PbF Lead-Free www.irf.com 1 12/10/04 IRFR/U2407PbF 2 www.irf.com IRFR/U2407PbF www.irf.com 3 IRFR/U2407PbF 4 www.irf.com IRFR/U2407PbF www.irf.com 5 IRFR/U2407PbF 6 www.irf.com IRFR/U2407PbF www.irf.com 7 IRFR/U2407PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat

PD - 95369A IRFR2405PbF IRFU2405PbF l Surface Mount (IRFR2405) HEXFET Power MOSFET l Straight Lead (IRFU2405) l Advanced Process Technology D VDSS = 55V l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated RDS(on) = 0.016 G l Lead-Free Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing

PD - 97688A AUTOMOTIVE GRADE AUIRFR2405 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS 55V Dynamic dV/dT Rating RDS(on) typ. l Low On-Resistance 11.8m l 175 C Operating Temperature max 16m G l Fast Switching ID (Silicon Limited) 56A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 30A up to Tjmax l Lead-Free, R

PD - 93861 IRFR2405 IRFU2405 HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405) D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.016 G Fully Avalanche Rated Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extreme

PD-95033A IRFR2407PbF IRFU2407PbF Lead-Free www.irf.com 1 12/10/04 IRFR/U2407PbF 2 www.irf.com IRFR/U2407PbF www.irf.com 3 IRFR/U2407PbF 4 www.irf.com IRFR/U2407PbF www.irf.com 5 IRFR/U2407PbF 6 www.irf.com IRFR/U2407PbF www.irf.com 7 IRFR/U2407PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat

PD -93862 IRFR2407 IRFU2407 HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026 G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremel

PD -93862 IRFR2407 IRFU2407 HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026 G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremel

AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175 C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi

isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405 FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V

isc N-Channel MOSFET Transistor IRFR2407, IIRFR2407 FEATURES Static drain-source on-resistance RDS(on) 26m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-