IRFR3504Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR3504Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 77 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: DPAK

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IRFR3504Z Datasheet (PDF)

..1. Size:331K international rectifier
irfr3504zpbf.pdf

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

..2. Size:331K infineon
irfr3504zpbf irfu3504zpbf.pdf

..3. Size:242K inchange semiconductor
irfr3504z.pdf

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504ZFEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate

0.1. Size:268K international rectifier
auirfr3504ztr.pdf

PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical

0.2. Size:664K infineon
auirfr3504z.pdf

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description

6.1. Size:593K international rectifier
irfr3504.pdf

PD - 94499AAUTOMOTIVE MOSFET IRFR3504IRFU3504FeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 9.2mGDescriptionSpecifically designed for Automotive applications, this HEXFETID = 30APower MOSFET utilizes the l

6.2. Size:228K international rectifier
auirfr3504.pdf

PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv

6.3. Size:324K international rectifier
irfr3504pbf.pdf

PD - 95315BIRFR3504PbFIRFU3504PbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating TemperatureD Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 9.2mGDescriptionThis HEXFET Power MOSFET utilizes the latest processingID = 30Atechniques to achieve extremely low on-resistan

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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