All MOSFET. IRFR3504Z Datasheet

 

IRFR3504Z Datasheet and Replacement


   Type Designator: IRFR3504Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 77 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DPAK
 

 IRFR3504Z substitution

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IRFR3504Z Datasheet (PDF)

 ..1. Size:331K  international rectifier
irfr3504zpbf.pdf pdf_icon

IRFR3504Z

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 ..2. Size:331K  international rectifier
irfr3504zpbf irfu3504zpbf.pdf pdf_icon

IRFR3504Z

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 ..3. Size:242K  inchange semiconductor
irfr3504z.pdf pdf_icon

IRFR3504Z

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504ZFEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate

 0.1. Size:268K  international rectifier
auirfr3504ztr.pdf pdf_icon

IRFR3504Z

PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical

Datasheet: IRFR2307Z , IRFR2405 , IRFR2407 , IRFR24N15D , IRFR2607Z , IRFR2905Z , IRFR3410 , IRFR3411 , IRFB3607 , IRFR3505 , IRFR3518 , IRFR3607 , IRFR3704Z , IRFR3707Z , IRFR3707ZC , IRFR3708 , IRFR3709Z .

History: SFG08R16DF | HSH15810 | 50N06L-TA3-T | MSW16N50 | CJ2302S | IPP126N10N3G | WMO18N65EM

Keywords - IRFR3504Z MOSFET datasheet

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