IRFR3504Z PDF and Equivalents Search

 

IRFR3504Z Specs and Replacement

Type Designator: IRFR3504Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DPAK

IRFR3504Z substitution

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IRFR3504Z datasheet

 ..1. Size:331K  international rectifier
 irfr3504zpbf.pdf pdf_icon

IRFR3504Z

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒

 ..2. Size:331K  international rectifier
 irfr3504zpbf irfu3504zpbf.pdf pdf_icon

IRFR3504Z

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒

 ..3. Size:242K  inchange semiconductor
 irfr3504z.pdf pdf_icon

IRFR3504Z

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504Z FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate... See More ⇒

 0.1. Size:268K  international rectifier
 auirfr3504ztr.pdf pdf_icon

IRFR3504Z

PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 40V Low On-Resistance 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching G ID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A S Automotive Qualified * Description D Specifical... See More ⇒

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Detailed specifications: IRFR2307Z, IRFR2405, IRFR2407, IRFR24N15D, IRFR2607Z, IRFR2905Z, IRFR3410, IRFR3411, K4145, IRFR3505, IRFR3518, IRFR3607, IRFR3704Z, IRFR3707Z, IRFR3707ZC, IRFR3708, IRFR3709Z

Keywords - IRFR3504Z MOSFET specs

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