IRFR4620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD -96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 64ml High Speed Power SwitchingG max. 78ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capacit

isc N-Channel MOSFET Transistor IRFR4620, IIRFR4620FEATURESStatic drain-source on-resistance:RDS(on)78mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 V

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip

IRFR4620TRPBFwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM R

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

isc N-Channel MOSFET Transistor IRFR4615, IIRFR4615FEATURESStatic drain-source on-resistance:RDS(on)42mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 V