IRFR4620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR4620
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 22.4 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: DPAK

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IRFR4620 Datasheet (PDF)

..1. Size:384K international rectifier
irfr4620pbf irfu4620pbf.pdf

PD -96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 64ml High Speed Power SwitchingG max. 78ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capacit

..2. Size:384K infineon
irfr4620pbf irfu4620pbf.pdf

..3. Size:241K inchange semiconductor
irfr4620.pdf

isc N-Channel MOSFET Transistor IRFR4620, IIRFR4620FEATURESStatic drain-source on-resistance:RDS(on)78mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 V

0.1. Size:626K infineon
auirfr4620.pdf

AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology VDSS 200V Ultra Low On-Resistance RDS(on) typ. 64m Dynamic dV/dT Rating max. 78m 175C Operating Temperature ID 24A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Descrip

0.2. Size:1008K cn vbsemi
irfr4620trpbf.pdf

IRFR4620TRPBFwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM R

8.1. Size:299K international rectifier
irfr4615pbf irfu4615pbf.pdf

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

8.2. Size:289K infineon
auirfr4615 auirfu4615.pdf

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

8.3. Size:299K infineon
irfr4615pbf irfu4615pbf.pdf

8.4. Size:241K inchange semiconductor
irfr4615.pdf

isc N-Channel MOSFET Transistor IRFR4615, IIRFR4615FEATURESStatic drain-source on-resistance:RDS(on)42mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 V

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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