All MOSFET. IRFR4620 Datasheet

 

IRFR4620 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR4620

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 144 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 25 nC

Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm

Package: DPAK

IRFR4620 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR4620 Datasheet (PDF)

1.1. irfr4620pbf irfu4620pbf.pdf Size:384K _international_rectifier

IRFR4620
IRFR4620

PD -96207A IRFR4620PbF IRFU4620PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 64m l High Speed Power Switching G max. 78m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capacit

1.2. irfr4620.pdf Size:241K _inchange_semiconductor

IRFR4620
IRFR4620

isc N-Channel MOSFET Transistor IRFR4620, IIRFR4620 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V

 4.1. irfr4615pbf irfu4615pbf.pdf Size:299K _international_rectifier

IRFR4620
IRFR4620

IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V Applications l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 34m l Uninterruptible Power Supply G max. 42m l High Speed Power Switching l Hard Switched and High Frequency Circuits ID 33A S D D Benefits l Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness G G l Fully Characterized Capac

4.2. irfr4615.pdf Size:241K _inchange_semiconductor

IRFR4620
IRFR4620

isc N-Channel MOSFET Transistor IRFR4615, IIRFR4615 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤42mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V

Datasheet: IRFR3709ZC , IRFR3710Z , IRFR3711Z , IRFR3711ZC , IRFR3806 , IRFR4104 , IRFR4105Z , IRFR4615 , 2SK3568 , IRFR48Z , IRFR540Z , IRFR9N20D , IRFS23N15D , IRFS23N20D , IRFS3004 , IRFS3004-7P , IRFS3006 .

 

 
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