IRFS41N15D Todos los transistores

 

IRFS41N15D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFS41N15D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: D2PAK

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IRFS41N15D datasheet

 ..1. Size:193K  international rectifier
 irfs41n15d.pdf pdf_icon

IRFS41N15D

PD- 93804A IRFB41N15D IRFS41N15D SMPS MOSFET IRFSL41N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.045 41A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

 ..2. Size:337K  international rectifier
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf pdf_icon

IRFS41N15D

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

 ..3. Size:708K  infineon
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf pdf_icon

IRFS41N15D

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 ..4. Size:257K  inchange semiconductor
 irfs41n15d.pdf pdf_icon

IRFS41N15D

Isc N-Channel MOSFET Transistor IRFS41N15D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

MOSTRAR MÁS

Otros transistores... IRFS3607 , IRFS3806 , IRFS38N20D , IRFS4010 , IRFS4010-7P , IRFS4115 , IRFS4115-7P , IRFS4127 , IRFB7545 , IRFS4227 , IRFS4229 , IRFS4310 , IRFS4310Z , IRFS4321 , IRFS4410 , IRFS4410Z , IRFS4610 .

History: IRFS4227

 

 

 


History: IRFS4227

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