IRFSL3107 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFSL3107
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 370 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 230 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 110 nS
   Conductancia de drenaje-sustrato (Cd): 840 pF
   Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
   Paquete / Cubierta: TO262

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IRFSL3107 Datasheet (PDF)

..1. Size:371K international rectifier
irfs3107pbf irfsl3107pbf.pdf

PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn

..2. Size:371K infineon
irfs3107pbf irfsl3107pbf.pdf

..3. Size:214K inchange semiconductor
irfsl3107pbf.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL3107PbFFEATURESWith TO-262(DPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

0.1. Size:716K infineon
auirfs3107 auirfsl3107.pdf

AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t

7.1. Size:290K international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf

IRFB31N20DPbFSMPS MOSFETIRFS31N20DPbFIRFSL31N20DPbFAppIications HEXFET Power MOSFETl High Frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max ID200V 0.082 31ABenefitsl Low Gate to Drain to Reduce SwitchingLossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design,(SeeAN 1001)l Fully Characterized Avalanche Voltageand Cur

7.2. Size:290K infineon
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf

7.3. Size:256K inchange semiconductor
irfsl31n20d.pdf

Isc N-Channel MOSFET Transistor IRFSL31N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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