IRFSL3107 Datasheet. Equivalente

 ..1. Size:371K  international rectifier
 irfs3107pbf irfsl3107pbf.pdf

PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.5m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 230A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dyn

 ..2. Size:214K  inchange semiconductor
 irfsl3107pbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL3107PbF FEATURES With TO-262(DPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:716K  infineon
 auirfs3107 auirfsl3107.pdf

AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t

 7.1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 7.2. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 7.3. Size:256K  inchange semiconductor
 irfsl31n20d.pdf

Isc N-Channel MOSFET Transistor IRFSL31N20D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage