IRFSL3107
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL3107
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 370
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 230
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 160
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 840
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package:
TO262
IRFSL3107
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL3107
Datasheet (PDF)
..1. Size:371K international rectifier
irfs3107pbf irfsl3107pbf.pdf 
PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn
..2. Size:371K infineon
irfs3107pbf irfsl3107pbf.pdf
PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn
..3. Size:214K inchange semiconductor
irfsl3107pbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL3107PbFFEATURESWith TO-262(DPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
0.1. Size:716K infineon
auirfs3107 auirfsl3107.pdf
AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t
7.1. Size:290K international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf
IRFB31N20DPbFSMPS MOSFETIRFS31N20DPbFIRFSL31N20DPbFAppIications HEXFET Power MOSFETl High Frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max ID200V 0.082 31ABenefitsl Low Gate to Drain to Reduce SwitchingLossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design,(SeeAN 1001)l Fully Characterized Avalanche Voltageand Cur
7.2. Size:290K infineon
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf
IRFB31N20DPbFSMPS MOSFETIRFS31N20DPbFIRFSL31N20DPbFAppIications HEXFET Power MOSFETl High Frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max ID200V 0.082 31ABenefitsl Low Gate to Drain to Reduce SwitchingLossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design,(SeeAN 1001)l Fully Characterized Avalanche Voltageand Cur
7.3. Size:256K inchange semiconductor
irfsl31n20d.pdf
Isc N-Channel MOSFET Transistor IRFSL31N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Datasheet: IRFS4620
, IRFS52N15D
, IRFS5615
, IRFS5620
, IRFS59N10D
, IRFSL23N20D
, IRFSL3004
, IRFSL3006
, IRF540N
, IRFSL31N20D
, IRFSL3206
, IRFSL3306
, IRFSL33N15D
, IRFSL3507
, IRFSL3607
, IRFSL3806
, IRFSL38N20D
.
