BF998 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF998
Código: MO_MOs
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1.05 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
Paquete / Cubierta: SOT143
Búsqueda de reemplazo de MOSFET BF998
BF998 Datasheet (PDF)
bf998 bf998r 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF998; BF998RSilicon N-channel dual-gateMOS-FETsProduct specification 1996 Aug 01Supersedes data of April 1991File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpaged4 3admit
bf998 r.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF998; BF998RSilicon N-channel dual-gate MOS-FETsProduct specification 1996 Aug 01Supersedes data of April 1991NXP Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpaged4 3admittance to input capacitance ratio Low
bf998 bf998r 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF998; BF998RSilicon N-channel dual-gateMOS-FETsProduct specification 1996 Aug 01Supersedes data of April 1991File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpaged4 3admit
bf998.pdf
Silicon N Channel MOSFET Tetrode BF 998Features Short-channel transistorwith high S/C quality factor For low-noise, gain-controlledinput stages up to 1 GHzType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BF 998 MO Q62702-F1129 S D G2 G1 SOT-143Maximum RatingsParameter Symbol Values UnitDrain-source voltage VDS 12 VDrain current ID 30 mAGate
bf998 bf998r.pdf
BF998...Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz Pb-free (RoHS compliant) package1) Qualified according AEC Q101ESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Package Pin Configuration MarkingBF998 SOT143 1=S 2=D 3=G2 4=G1 - - M
bf998wr 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF998WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF998WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t
bf998wr.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF998WRN-channel dual-gate MOS-FETProduct specification 1997 Sep 05Supersedes data of 1995 Apr 25NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF998WRFEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input
bf998r.pdf
BF 998RSilicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code PIN Configuration Package-BF 998R MOs Q62702-F1177 1 = D 2 = S 3 = G1 4 = G2 SOT-143RAll e
bf998w.pdf
BF 998WSilicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code PIN Configuration PackageBF 998W MOs Q62702-F1586 1 = D 2 = S 3 = G1 4 = G2 SOT-343all elect
Otros transistores... BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR , BF997 , IRF740 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 , BFC15 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918