BF998 Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admit

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admittance to input capacitance ratio Low

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admit

Silicon N Channel MOSFET Tetrode BF 998 Features Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BF 998 MO Q62702-F1129 S D G2 G1 SOT-143 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 12 V Drain current ID 30 mA Gate

BF998... Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz Pb-free (RoHS compliant) package1) Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 SOT143 1=S 2=D 3=G2 4=G1 - - M

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET 1997 Sep 05 Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward t

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification 1997 Sep 05 Supersedes data of 1995 Apr 25 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input

BF 998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package - BF 998R MOs Q62702-F1177 1 = D 2 = S 3 = G1 4 = G2 SOT-143R All e

BF 998W Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 998W MOs Q62702-F1586 1 = D 2 = S 3 = G1 4 = G2 SOT-343 all elect