BF998 Todos los transistores

 

BF998 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF998

Código: MO_MOs

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1.05 pF

Resistencia drenaje-fuente RDS(on): 200 Ohm

Empaquetado / Estuche: SOT143

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BF998 Datasheet (PDF)

1.1. bf998 r.pdf Size:279K _philips

BF998
BF998

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES ? Short channel transistor with high forward transfer handbook, halfpage d 4 3 admittance to input capacitance ratio ? Low noise

1.2. bf998 bf998r 2.pdf Size:79K _philips

BF998
BF998

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admittance

 1.3. bf998 bf998r 1.pdf Size:114K _philips

BF998
BF998

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admittance

1.4. bf998wr 2.pdf Size:76K _philips

BF998
BF998

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET 1997 Sep 05 Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer

 1.5. bf998wr.pdf Size:255K _philips

BF998
BF998

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification 1997 Sep 05 Supersedes data of 1995 Apr 25 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING ? High forward transfer admittance PIN SYMBOL DESCRIPTION ? Short channel transistor with high forward transfer 1s, b source admittance to input capacit

1.6. bf998r.pdf Size:33K _siemens

BF998
BF998

BF 998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package - BF 998R MOs Q62702-F1177 1 = D 2 = S 3 = G1 4 = G2 SOT-143R All electric

1.7. bf998w.pdf Size:30K _siemens

BF998
BF998

BF 998W Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 998W MOs Q62702-F1586 1 = D 2 = S 3 = G1 4 = G2 SOT-343 all electrical d

1.8. bf998.pdf Size:180K _siemens

BF998
BF998

Silicon N Channel MOSFET Tetrode BF 998 Features Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BF 998 MO Q62702-F1129 S D G2 G1 SOT-143 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 12 V Drain current ID 30 mA Gate 1/g

Otros transistores... BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR , BF997 , IRF740 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 , BFC15 .

 
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