DISCRETE SEMICONDUCTORSDATA SHEETBF998; BF998RSilicon N-channel dual-gateMOS-FETsProduct specification 1996 Aug 01Supersedes data of April 1991File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpaged4 3admit

DISCRETE SEMICONDUCTORS DATA SHEETBF998; BF998RSilicon N-channel dual-gate MOS-FETsProduct specification 1996 Aug 01Supersedes data of April 1991NXP Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpaged4 3admittance to input capacitance ratio Low

DISCRETE SEMICONDUCTORSDATA SHEETBF998; BF998RSilicon N-channel dual-gateMOS-FETsProduct specification 1996 Aug 01Supersedes data of April 1991File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpaged4 3admit

Silicon N Channel MOSFET Tetrode BF 998Features Short-channel transistorwith high S/C quality factor For low-noise, gain-controlledinput stages up to 1 GHzType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BF 998 MO Q62702-F1129 S D G2 G1 SOT-143Maximum RatingsParameter Symbol Values UnitDrain-source voltage VDS 12 VDrain current ID 30 mAGate

BF998...Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz Pb-free (RoHS compliant) package1) Qualified according AEC Q101ESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Package Pin Configuration MarkingBF998 SOT143 1=S 2=D 3=G2 4=G1 - - M

DISCRETE SEMICONDUCTORSDATA SHEETBF998WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF998WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t

DISCRETE SEMICONDUCTORS DATA SHEETBF998WRN-channel dual-gate MOS-FETProduct specification 1997 Sep 05Supersedes data of 1995 Apr 25NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF998WRFEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input

BF 998RSilicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code PIN Configuration Package-BF 998R MOs Q62702-F1177 1 = D 2 = S 3 = G1 4 = G2 SOT-143RAll e

BF 998WSilicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code PIN Configuration PackageBF 998W MOs Q62702-F1586 1 = D 2 = S 3 = G1 4 = G2 SOT-343all elect