IRFSL59N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFSL59N10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 59 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 V
   Qgⓘ - Carga de la puerta: 76 nC
   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO262

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IRFSL59N10D Datasheet (PDF)

..1. Size:227K infineon
irfb59n10dpbf irfs59n10dpbf irfsl59n10dpbf.pdf

PD - 95378IRFB59N10DPbF IRFS59N10DPbFSMPS MOSFET IRFSL59N10DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl UPS / Motor Control Inverters 100V 0.025 59Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1

..2. Size:277K inchange semiconductor
irfsl59n10d.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL59N10DFEATURESStatic drain-source on-resistance:RDS(on) 0.025Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS

8.1. Size:138K international rectifier
irfsl52n15d.pdf

PD - 94357AIRFB52N15D IRFS52N15DSMPS MOSFET IRFSL52N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.032 60ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current

8.2. Size:345K international rectifier
irfs5615pbf irfsl5615pbf.pdf

PD - 96204DIGITAL AUDIO MOSFET IRFS5615PbFIRFSL5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m34.5 Low RDSON for Improved EfficiencyQg typ.26 nC Low QG and QSW for Better THD and Improved Qsw typ.11 nCRG(int) typ. Efficiency 2.7 TJ max175 C Low QRR for Better THD

8.3. Size:333K international rectifier
irfs5620pbf irfsl5620pbf.pdf

PD - 96205DIGITAL AUDIO MOSFETIRFS5620PbFFeatures IRFSL5620PbF Key Parameters Optimized for Class-D AudioKey Parameters Amplifier ApplicationsVDS200 V Low RDSON for Improved EfficiencyRDS(ON) typ. @ 10V m63.7 Low QG and QSW for Better THD and ImprovedQg typ.25 nC EfficiencyQsw typ.9.8 nC Low QRR for Better THD and Lower EMI RG(int) typ. 2.6

8.4. Size:325K infineon
irfb52n15dpbf irfs52n15dpbf irfsl52n15dpbf.pdf

PD - 97002AIRFB52N15DPbFIRFS52N15DPbFIRFSL52N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersKey Parametersl Plasma Display PanelVDS 150 VVDS (Avalanche) min. 200 VBenefitsRDS(ON) max @ 10V 32 ml Low Gate-to-Drain Charge toTJ maxReduce\ Switching Losses 175 Cl Fully Characterized Capacitance Including Effective COSS to SimplifyDesign

8.5. Size:286K inchange semiconductor
irfsl52n15d.pdf

isc N-Channel MOSFET Transistor IRFSL52N15DFEATURESStatic drain-source on-resistance:RDS(on)32mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDS

8.6. Size:232K inchange semiconductor
irfsl5615.pdf

Isc N-Channel MOSFET Transistor IRFSL5615FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 15

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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