All MOSFET. IRFSL59N10D Datasheet

 

IRFSL59N10D Datasheet and Replacement


   Type Designator: IRFSL59N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO262
 

 IRFSL59N10D substitution

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IRFSL59N10D Datasheet (PDF)

 ..1. Size:227K  international rectifier
irfb59n10dpbf irfs59n10dpbf irfsl59n10dpbf.pdf pdf_icon

IRFSL59N10D

PD - 95378IRFB59N10DPbF IRFS59N10DPbFSMPS MOSFET IRFSL59N10DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl UPS / Motor Control Inverters 100V 0.025 59Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1

 ..2. Size:277K  inchange semiconductor
irfsl59n10d.pdf pdf_icon

IRFSL59N10D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL59N10DFEATURESStatic drain-source on-resistance:RDS(on) 0.025Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS

 8.1. Size:138K  international rectifier
irfsl52n15d.pdf pdf_icon

IRFSL59N10D

PD - 94357AIRFB52N15D IRFS52N15DSMPS MOSFET IRFSL52N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.032 60ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current

 8.2. Size:345K  international rectifier
irfs5615pbf irfsl5615pbf.pdf pdf_icon

IRFSL59N10D

PD - 96204DIGITAL AUDIO MOSFET IRFS5615PbFIRFSL5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m34.5 Low RDSON for Improved EfficiencyQg typ.26 nC Low QG and QSW for Better THD and Improved Qsw typ.11 nCRG(int) typ. Efficiency 2.7 TJ max175 C Low QRR for Better THD

Datasheet: IRFSL4321 , IRFSL4410 , IRFSL4410Z , IRFSL4610 , IRFSL4615 , IRFSL4620 , IRFSL5615 , IRFSL5620 , IRFP260 , IRFTS8342 , IRFU1010Z , IRFU1018E , IRFU120Z , IRFU13N15D , IRFU13N20D , IRFU15N20D , IRFU18N15D .

History: STR2N2VH5

Keywords - IRFSL59N10D MOSFET datasheet

 IRFSL59N10D cross reference
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