IRFSL59N10D MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFSL59N10D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 59 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 76 nC

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO262

IRFSL59N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFSL59N10D Datasheet (PDF)

4.1. irfs5620pbf irfsl5620pbf.pdf Size:333K _upd

PD - 96205 DIGITAL AUDIO MOSFET IRFS5620PbF Features IRFSL5620PbF • Key Parameters Optimized for Class-D Audio Key Parameters Amplifier Applications VDS 200 V • Low RDSON for Improved Efficiency RDS(ON) typ. @ 10V m 63.7 • Low QG and QSW for Better THD and Improved Qg typ. 25 nC Efficiency Qsw typ. 9.8 nC • Low QRR for Better THD and Lower EMI RG(int) typ. 2.6 Ω

4.2. irfs5615pbf irfsl5615pbf.pdf Size:345K _upd

PD - 96204 DIGITAL AUDIO MOSFET IRFS5615PbF IRFSL5615PbF Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 V Amplifier Applications RDS(ON) typ. @ 10V m 34.5 • Low RDSON for Improved Efficiency Qg typ. 26 nC • Low QG and QSW for Better THD and Improved Qsw typ. 11 nC RG(int) typ. Efficiency 2.7 Ω TJ max 175 °C • Low QRR for Better THD

4.3. irfsl52n15d.pdf Size:138K _upd

PD - 94357A IRFB52N15D IRFS52N15D SMPS MOSFET IRFSL52N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

4.4. irfs5620pbf irfsl5620pbf.pdf Size:333K _international_rectifier