All MOSFET. IRFSL59N10D Datasheet

 

IRFSL59N10D MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFSL59N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 59 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO262

 IRFSL59N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFSL59N10D Datasheet (PDF)

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