IRFU3518 Todos los transistores

 

IRFU3518 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU3518
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: IPAK
     - Selección de transistores por parámetros

 

IRFU3518 Datasheet (PDF)

 ..1. Size:228K  international rectifier
irfr3518pbf irfu3518pbf.pdf pdf_icon

IRFU3518

PD - 95510AIRFR3518PbF IRFU3518PbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl Lead-Free 80V 29mW 30ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current

 ..2. Size:261K  inchange semiconductor
irfu3518.pdf pdf_icon

IRFU3518

isc N-Channel MOSFET Transistor IRFU3518FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.1. Size:332K  international rectifier
irfr3505pbf irfu3505pbf.pdf pdf_icon

IRFU3518

PD - 95511BIRFR3505PbFIRFU3505PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013G Lead-FreeID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resis

 8.2. Size:331K  international rectifier
irfr3504zpbf irfu3504zpbf.pdf pdf_icon

IRFU3518

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

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History: SI2308 | SPP80P06PH | IRFPC42R | SIHF9540S | HSSC3134 | HITJ0203MP | SSM60T03GP

 

 
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