IRFU3710Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU3710Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de IRFU3710Z MOSFET
IRFU3710Z Datasheet (PDF)
irfu3710z.pdf

PD - 94740AIRFR3710ZAUTOMOTIVE MOSFETIRFU3710ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 100Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 18ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the lat
irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro
irfu3710z.pdf

isc N-Channel MOSFET Transistor IRFU3710ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irfr3711zpbf irfu3711zpbf.pdf

PD - 95074AIRFR3711ZPbFIRFU3711ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-PakI
Otros transistores... IRFU3505 , IRFU3518 , IRFU3607 , IRFU3704Z , IRFU3707Z , IRFU3708 , IRFU3709 , IRFU3709Z , P60NF06 , IRFU3711Z , IRFU3806 , IRFU4104 , IRFU4105Z , IRFU4615 , IRFU4620 , IRFU48Z , IRFU9N20D .
History: SFB052N100C2 | FDMS86183 | AP4822QD | AP65PN2R5I | CHM740ANGP | MMN8818E | MMQ60R070PTH
History: SFB052N100C2 | FDMS86183 | AP4822QD | AP65PN2R5I | CHM740ANGP | MMN8818E | MMQ60R070PTH



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
a1941 datasheet | hrf3205 | c2837 datasheet | 2n414 | c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt