IRFZ44VS Datasheet. Equivalente

 ..1. Size:145K  international rectifier
 irfz44vs irfz44vl.pdf

PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 16.5m Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing te

 7.1. Size:226K  international rectifier
 irfz44vpbf.pdf

PD - 94826A IRFZ44VPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced pro

 7.2. Size:229K  international rectifier
 irfz44v.pdf

PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

 7.3. Size:372K  international rectifier
 irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf

PD - 95947A IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 60V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m Lead-Free G Description ID = 57A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel

 7.4. Size:301K  international rectifier
 irfz44vzl irfz44vzpbf irfz44vzspbf.pdf

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 7.5. Size:274K  international rectifier
 auirfz44vzstrl.pdf

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6m l 175 C Operating Temperature l Fast Switching G max. 12m l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

 7.6. Size:580K  international rectifier
 auirfz44v.pdf

PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features D V(BR)DSS l Advanced Planar Technology 60V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 16.5m l 175 C Operating Temperature G l Fast Switching ID 55A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S D

 7.7. Size:301K  international rectifier
 irfz44vz irfz44vzs irfz44vzl.pdf

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 7.8. Size:654K  infineon
 auirfz44vzs.pdf

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175 C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

 7.9. Size:910K  cn vbsemi
 irfz44vp.pdf

IRFZ44VP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 7.10. Size:245K  inchange semiconductor
 irfz44vz.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44VZ IIRFZ44VZ FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 7.11. Size:245K  inchange semiconductor
 irfz44v.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44V IIRFZ44V FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 7.12. Size:257K  inchange semiconductor
 irfz44vzs.pdf

Isc N-Channel MOSFET Transistor IRFZ44VZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol