IRFZ44VS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ44VS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 115 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 55 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 67 nC
Время нарастания (tr): 97 ns
Выходная емкость (Cd): 393 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0165 Ohm
Тип корпуса: D2PAK
IRFZ44VS Datasheet (PDF)
irfz44vs irfz44vl.pdf
PD - 94050AIRFZ44VSIRFZ44VLHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 16.5m Fully Avalanche RatedG Optimized for SMPS ApplicationsID = 55ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilize advancedprocessing te
irfz44vpbf.pdf
PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro
irfz44v.pdf
PD - 93957AIRFZ44VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mWG Fast Switching Fully Avalanche RatedID = 55A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac
irfz44vzl irfz44vzpbf irfz44vzspbf.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
auirfz44vzstrl.pdf
PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo
auirfz44v.pdf
PD - 96415AUTOMOTIVE GRADEAUIRFZ44VHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Planar Technology 60Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.16.5ml 175C Operating TemperatureGl Fast SwitchingID 55Al Fully Avalanche RatedSl Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *DescriptionSD
irfz44vpbf.pdf
PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro
irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf
PD - 95947AIRFZ44VZPbFIRFZ44VZSPbFIRFZ44VZLPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 60V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12m Lead-FreeGDescriptionID = 57AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremel
auirfz44vzs.pdf
AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed
irfz44vz irfz44vzs irfz44vzl.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
irfz44vp.pdf
IRFZ44VPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
irfz44vz.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irfz44v.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44V IIRFZ44VFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irfz44vzs.pdf
Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
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