IRL1404 Todos los transistores

 ..1. Size:102K  international rectifier
 irl1404.pdf

PD -93854 IRL1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 160A S Description Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 ..2. Size:213K  international rectifier
 irl1404pbf.pdf

PD - 95588A IRL1404PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 4.0m G l Fast Switching l Fully Avalanche Rated ID = 160A l Lead-Free S Description Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to

 ..3. Size:245K  inchange semiconductor
 irl1404.pdf

isc N-Channel MOSFET Transistor IRL1404 IIRL1404 FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extre

 0.1. Size:646K  international rectifier
 irl1404lpbf irl1404spbf.pdf

PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004 Lead-Free G Description ID = 160A Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniqu

 0.2. Size:133K  international rectifier
 irl1404l irl1404s.pdf

PD - 93854A IRL1404S IRL1404L Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 0.004 Fully Avalanche Rated G Description Seventh Generation HEXFET power MOSFETs from ID = 160A International Rectifier utilize advanced processing S techniques to achieve e

 0.3. Size:250K  international rectifier
 auirl1404l auirl1404s.pdf

PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive D Low On-Resistance V(BR)DSS 40V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 4m Fast Switching G Fully Avalanche Rated ID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

 0.4. Size:375K  international rectifier
 auirl1404zstrl.pdf

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS AUIRL1404ZL Features HEXFET Power MOSFET l Logic Level l Advanced Process Technology V(BR)DSS 40V D l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.5m l Fast Switching max. 3.1m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

 0.5. Size:648K  international rectifier
 irl1404spbf irl1404lpbf.pdf

PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004 Lead-Free G Description ID = 160A Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniqu

 0.6. Size:285K  international rectifier
 irl1404zpbf irl1404zspbf irl1404zlpbf.pdf

PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Features l Logic Level HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 40V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.1m l Lead-Free G ID = 120A S Description This HEXFET Power MOSFET utilizes the latest processing techniqu

 0.7. Size:754K  infineon
 auirl1404z auirl1404zs auirl1404zl.pdf

AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax

 0.8. Size:252K  inchange semiconductor
 irl1404z.pdf

isc N-Channel MOSFET Transistor IRL1404Z FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 0.9. Size:257K  inchange semiconductor
 irl1404s.pdf

Isc N-Channel MOSFET Transistor IRL1404S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt