IRL1404 - описание и поиск аналогов

PD -93854 IRL1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 160A S Description Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD - 95588A IRL1404PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 4.0m G l Fast Switching l Fully Avalanche Rated ID = 160A l Lead-Free S Description Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to

isc N-Channel MOSFET Transistor IRL1404 IIRL1404 FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extre

PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004 Lead-Free G Description ID = 160A Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniqu

PD - 93854A IRL1404S IRL1404L Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 0.004 Fully Avalanche Rated G Description Seventh Generation HEXFET power MOSFETs from ID = 160A International Rectifier utilize advanced processing S techniques to achieve e

PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive D Low On-Resistance V(BR)DSS 40V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 4m Fast Switching G Fully Avalanche Rated ID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS AUIRL1404ZL Features HEXFET Power MOSFET l Logic Level l Advanced Process Technology V(BR)DSS 40V D l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.5m l Fast Switching max. 3.1m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004 Lead-Free G Description ID = 160A Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniqu

PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Features l Logic Level HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 40V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.1m l Lead-Free G ID = 120A S Description This HEXFET Power MOSFET utilizes the latest processing techniqu

AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax

isc N-Channel MOSFET Transistor IRL1404Z FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

Isc N-Channel MOSFET Transistor IRL1404S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt