IRL3705ZL Todos los transistores

 

IRL3705ZL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3705ZL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 240 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET IRL3705ZL

 

IRL3705ZL Datasheet (PDF)

 ..1. Size:377K  international rectifier
irl3705zpbf irl3705zspbf irl3705zlpbf.pdf

IRL3705ZL
IRL3705ZL

PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 ..2. Size:377K  infineon
irl3705zpbf irl3705zspbf irl3705zlpbf.pdf

IRL3705ZL
IRL3705ZL

PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 0.1. Size:759K  infineon
auirl3705z auirl3705zs auirl3705zl.pdf

IRL3705ZL
IRL3705ZL

AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le

 6.1. Size:378K  international rectifier
auirl3705zstrl.pdf

IRL3705ZL
IRL3705ZL

PD - 96345AUTOMOTIVE GRADEAUIRL3705ZAUIRL3705ZSAUIRL3705ZLFeaturesHEXFET Power MOSFETl Logic LevelV(BR)DSS 55VDl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.6.5ml 175C Operating Temperaturel Fast Switching max. 8.0mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)86A l Lead-Free, RoHS CompliantSl Automotiv

 6.2. Size:258K  inchange semiconductor
irl3705zs.pdf

IRL3705ZL
IRL3705ZL

Isc N-Channel MOSFET Transistor IRL3705ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.3. Size:246K  inchange semiconductor
irl3705z.pdf

IRL3705ZL
IRL3705ZL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705ZIIRL3705ZFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top

 


IRL3705ZL
  IRL3705ZL
  IRL3705ZL
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top