IRL3705ZL - описание и поиск аналогов

PD - 95579A IRL3705ZPbF IRL3705ZSPbF Features IRL3705ZLPbF l Logic Level HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.0m G l Lead-Free Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniqu

AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175 C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le

PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features HEXFET Power MOSFET l Logic Level V(BR)DSS 55V D l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 6.5m l 175 C Operating Temperature l Fast Switching max. 8.0m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 86A l Lead-Free, RoHS Compliant S l Automotiv

Isc N-Channel MOSFET Transistor IRL3705ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3705Z IIRL3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM