IRL3705ZS Todos los transistores

 

IRL3705ZS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3705ZS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 130 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 86 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 40 nC

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: D2PAK

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IRL3705ZS Datasheet (PDF)

1.1. irl3705zpbf irl3705zspbf irl3705zlpbf.pdf Size:377K _upd

IRL3705ZS
IRL3705ZS

PD - 95579A IRL3705ZPbF IRL3705ZSPbF Features IRL3705ZLPbF l Logic Level HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.0mΩ G l Lead-Free Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

3.1. irl3705nspbf irl3705nlpbf.pdf Size:297K _upd

IRL3705ZS
IRL3705ZS

PD - 95381 IRL3705NSPbF l Logic-Level Gate Drive IRL3705NLPbF l Advanced Process Technology l Surface Mount (IRL3705NS) HEXFET® Power MOSFET l Low-profile through-hole (IRL3705NL) D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.01Ω l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier ID = 89A† S

3.2. irl3705npbf.pdf Size:481K _upd

IRL3705ZS
IRL3705ZS

PD - 94960 IRL3705NPbF • Lead-Free www.irf.com 1 IRL3705NPbF 2 www.irf.com IRL3705NPbF www.irf.com 3 IRL3705NPbF 4 www.irf.com IRL3705NPbF www.irf.com 5 IRL3705NPbF 6 www.irf.com IRL3705NPbF Peak Diode Recovery dv/dt Test Circuit * • • ƒ •

 3.3. irl3705ns.pdf Size:186K _international_rectifier

IRL3705ZS
IRL3705ZS

PD - 91502C IRL3705NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating Temperature RDS(on) = 0.01? Fast Switching G Fully Avalanche Rated ID = 89A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

3.4. irl3705n.pdf Size:106K _international_rectifier

IRL3705ZS
IRL3705ZS

PD - 9.1370C IRL3705N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.01? Fast Switching G Fully Avalanche Rated ID = 89A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

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