IRL3705ZS Todos los transistores

PD - 95579A IRL3705ZPbF IRL3705ZSPbF Features IRL3705ZLPbF l Logic Level HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.0m G l Lead-Free Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniqu

Isc N-Channel MOSFET Transistor IRL3705ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features HEXFET Power MOSFET l Logic Level V(BR)DSS 55V D l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 6.5m l 175 C Operating Temperature l Fast Switching max. 8.0m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 86A l Lead-Free, RoHS Compliant S l Automotiv

AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175 C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3705Z IIRL3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM