IRL3803V Todos los transistores

 

IRL3803V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL3803V
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) V
   Qgⓘ - Carga de la puerta: 76 nC
   trⓘ - Tiempo de subida: 180 nS
   Cossⓘ - Capacitancia de salida: 1480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO220AB
 

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IRL3803V Datasheet (PDF)

 ..1. Size:210K  international rectifier
irl3803vpbf.pdf pdf_icon

IRL3803V

PD - 95955IRL3803VPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Fully Avalanche RatedID = 140Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 ..2. Size:245K  inchange semiconductor
irl3803v.pdf pdf_icon

IRL3803V

isc N-Channel MOSFET Transistor IRL3803VIIRL3803VFEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an ext

 0.1. Size:273K  international rectifier
irl3803vspbf irl3803vlpbf.pdf pdf_icon

IRL3803V

PD - 95449IRL3803VSPbFIRL3803VLPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast Switchingl Fully Avalanche Rated ID = 140ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rec

 0.2. Size:225K  international rectifier
irl3803vl irl3803vs.pdf pdf_icon

IRL3803V

PD - 94735IRL3803VSIRL3803VLHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast SwitchingID = 140Al Fully Avalanche RatedSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize ad

Otros transistores... IRL3705ZS , IRL3713 , IRL3713S , IRL3714Z , IRL3714ZS , IRL3715Z , IRL3715ZL , IRL3715ZS , IRFP064N , IRL3803VS , IRL6342 , IRL7833 , IRL7833L , IRL7833S , IRL8113 , IRL8113L , IRL8113S .

History: TMAN16N60A

 

 
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