IRL3803V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3803V  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 180 nS

Cossⓘ - Capacitancia de salida: 1480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO220AB

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IRL3803V datasheet

 ..1. Size:210K  international rectifier
 irl3803vpbf.pdf pdf_icon

IRL3803V

PD - 95955 IRL3803VPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Fully Avalanche Rated ID = 140A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 ..2. Size:245K  inchange semiconductor
 irl3803v.pdf pdf_icon

IRL3803V

isc N-Channel MOSFET Transistor IRL3803V IIRL3803V FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an ext

 0.1. Size:273K  international rectifier
 irl3803vspbf irl3803vlpbf.pdf pdf_icon

IRL3803V

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rec

 0.2. Size:225K  international rectifier
 irl3803vl irl3803vs.pdf pdf_icon

IRL3803V

PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching ID = 140A l Fully Avalanche Rated S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize ad

MOSTRAR MÁS

Otros transistores... IRL3705ZS, IRL3713, IRL3713S, IRL3714Z, IRL3714ZS, IRL3715Z, IRL3715ZL, IRL3715ZS, 2SK2842, IRL3803VS, IRL6342, IRL7833, IRL7833L, IRL7833S, IRL8113, IRL8113L, IRL8113S