IRL3803V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3803V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 180 nS
Cossⓘ - Capacitancia de salida: 1480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRL3803V MOSFET
IRL3803V datasheet
irl3803vpbf.pdf
PD - 95955 IRL3803VPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Fully Avalanche Rated ID = 140A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
irl3803v.pdf
isc N-Channel MOSFET Transistor IRL3803V IIRL3803V FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an ext
irl3803vspbf irl3803vlpbf.pdf
PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rec
irl3803vl irl3803vs.pdf
PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching ID = 140A l Fully Avalanche Rated S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize ad
Otros transistores... IRL3705ZS , IRL3713 , IRL3713S , IRL3714Z , IRL3714ZS , IRL3715Z , IRL3715ZL , IRL3715ZS , AO4468 , IRL3803VS , IRL6342 , IRL7833 , IRL7833L , IRL7833S , IRL8113 , IRL8113L , IRL8113S .
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