IRL3803V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3803V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 140 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 50.7 nC

Resistencia drenaje-fuente RDS(on): 0.0055 Ohm

Empaquetado / Estuche: TO220AB

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IRL3803V Datasheet (PDF)

1.1. irl3803vspbf irl3803vlpbf.pdf Size:273K _upd

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5mΩ l 175°C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A‡ S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rec

1.2. irl3803vpbf.pdf Size:210K _upd

PD - 95955 IRL3803VPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 5.5mΩ l Fast Switching G l Fully Avalanche Rated ID = 140A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

1.3. irl3803vl irl3803vs.pdf Size:225K _upd

PD - 94735 IRL3803VS IRL3803VL HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5mΩ l 175°C Operating Temperature G l Fast Switching ID = 140A‡ l Fully Avalanche Rated S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize ad

Otros transistores... IRL3705ZS , IRL3713 , IRL3713S , IRL3714Z , IRL3714ZS , IRL3715Z , IRL3715ZL , IRL3715ZS , 2SK2837 , IRL3803VS , IRL6342 , IRL7833 , IRL7833L , IRL7833S , IRL8113 , IRL8113L , IRL8113S .

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