All MOSFET. IRL3803V Datasheet

 

IRL3803V MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL3803V

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Drain Current |Id|: 140 A

Total Gate Charge (Qg): 50.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: TO220AB

IRL3803V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRL3803V Datasheet (PDF)

1.1. irl3803vspbf irl3803vlpbf.pdf Size:273K _upd

IRL3803V
IRL3803V

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5mΩ l 175°C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A‡ S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rec

1.2. irl3803vpbf.pdf Size:210K _upd

IRL3803V
IRL3803V

PD - 95955 IRL3803VPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 5.5mΩ l Fast Switching G l Fully Avalanche Rated ID = 140A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 1.3. irl3803vl irl3803vs.pdf Size:225K _upd

IRL3803V
IRL3803V

PD - 94735 IRL3803VS IRL3803VL HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5mΩ l 175°C Operating Temperature G l Fast Switching ID = 140A‡ l Fully Avalanche Rated S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize ad

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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