IRL7833L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL7833L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: TO262

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IRL7833L datasheet

 ..1. Size:269K  international rectifier
 irl7833pbf irl7833lpbf irl7833spbf.pdf pdf_icon

IRL7833L

PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance TO-220A

 ..2. Size:269K  international rectifier
 irl7833pbf irl7833spbf irl7833lpbf.pdf pdf_icon

IRL7833L

PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance TO-220A

 7.1. Size:246K  inchange semiconductor
 irl7833.pdf pdf_icon

IRL7833L

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL7833 IIRL7833 FEATURES Static drain-source on-resistance RDS(on) 3.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 7.2. Size:270K  inchange semiconductor
 irl7833s.pdf pdf_icon

IRL7833L

isc N-Channel MOSFET Transistor IRL7833S DESCRIPTION Static drain-source on-resistance RDS(on) 3.8m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... IRL3714ZS, IRL3715Z, IRL3715ZL, IRL3715ZS, IRL3803V, IRL3803VS, IRL6342, IRL7833, IRF740, IRL7833S, IRL8113, IRL8113L, IRL8113S, IRLB3034, IRLB3036, IRLB3036G, IRLB3813