IRL7833L Datasheet. Specs and Replacement

Type Designator: IRL7833L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO262

IRL7833L substitution

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IRL7833L datasheet

 ..1. Size:269K  international rectifier
 irl7833pbf irl7833lpbf irl7833spbf.pdf pdf_icon

IRL7833L

PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance TO-220A... See More ⇒

 ..2. Size:269K  international rectifier
 irl7833pbf irl7833spbf irl7833lpbf.pdf pdf_icon

IRL7833L

PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance TO-220A... See More ⇒

 7.1. Size:246K  inchange semiconductor
 irl7833.pdf pdf_icon

IRL7833L

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL7833 IIRL7833 FEATURES Static drain-source on-resistance RDS(on) 3.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R... See More ⇒

 7.2. Size:270K  inchange semiconductor
 irl7833s.pdf pdf_icon

IRL7833L

isc N-Channel MOSFET Transistor IRL7833S DESCRIPTION Static drain-source on-resistance RDS(on) 3.8m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATING... See More ⇒

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Detailed specifications: IRL3714ZS, IRL3715Z, IRL3715ZL, IRL3715ZS, IRL3803V, IRL3803VS, IRL6342, IRL7833, IRF740, IRL7833S, IRL8113, IRL8113L, IRL8113S, IRLB3034, IRLB3036, IRLB3036G, IRLB3813

Keywords - IRL7833L MOSFET specs

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