IRL7833L
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL7833L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 150
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 950
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038
Ohm
Package:
TO262
IRL7833L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL7833L
Datasheet (PDF)
..1. Size:269K international rectifier
irl7833pbf irl7833lpbf irl7833spbf.pdf
PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A
..2. Size:269K infineon
irl7833pbf irl7833spbf irl7833lpbf.pdf
PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A
7.1. Size:246K inchange semiconductor
irl7833.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL7833IIRL7833FEATURESStatic drain-source on-resistance:RDS(on) 3.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
7.2. Size:270K inchange semiconductor
irl7833s.pdf
isc N-Channel MOSFET Transistor IRL7833SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 3.8m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATING
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