IRLB3034 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLB3034  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 343 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 827 nS

Cossⓘ - Capacitancia de salida: 1980 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm

Encapsulados: TO220AB

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IRLB3034 datasheet

 ..1. Size:291K  international rectifier
 irlb3034pbf.pdf pdf_icon

IRLB3034

PD -97363 IRLB3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 343A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Optimized for Logic Level Drive l

 7.1. Size:294K  international rectifier
 irlb3036gpbf.pdf pdf_icon

IRLB3034

PD - 96275 IRLB3036GPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive

 7.2. Size:284K  international rectifier
 irlb3036pbf.pdf pdf_icon

IRLB3034

PD - 97357 IRLB3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive

 7.3. Size:250K  international rectifier
 auirlb3036.pdf pdf_icon

IRLB3034

AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli

MOSTRAR MÁS

Otros transistores... IRL3803VS, IRL6342, IRL7833, IRL7833L, IRL7833S, IRL8113, IRL8113L, IRL8113S, 50N06, IRLB3036, IRLB3036G, IRLB3813, IRLB4030, IRLB8721, IRLB8743, IRLB8748, IRLH5030