IRLB3034 - Даташиты. Аналоги. Основные параметры

PD -97363 IRLB3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 343A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Optimized for Logic Level Drive l

PD - 96275 IRLB3036GPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive

PD - 97357 IRLB3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive

AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB3036 IIRLB3036 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU