IRLB3036 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLB3036  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 380 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 270 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 220 nS

Cossⓘ - Capacitancia de salida: 1020 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO220AB

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IRLB3036 datasheet

 ..1. Size:284K  international rectifier
 irlb3036pbf.pdf pdf_icon

IRLB3036

PD - 97357 IRLB3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive

 ..2. Size:251K  inchange semiconductor
 irlb3036.pdf pdf_icon

IRLB3036

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB3036 IIRLB3036 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 0.1. Size:294K  international rectifier
 irlb3036gpbf.pdf pdf_icon

IRLB3036

PD - 96275 IRLB3036GPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive

 0.2. Size:250K  international rectifier
 auirlb3036.pdf pdf_icon

IRLB3036

AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli

MOSTRAR MÁS

Otros transistores... IRL6342, IRL7833, IRL7833L, IRL7833S, IRL8113, IRL8113L, IRL8113S, IRLB3034, 50N06, IRLB3036G, IRLB3813, IRLB4030, IRLB8721, IRLB8743, IRLB8748, IRLH5030, IRLH5034