Справочник MOSFET. IRLB3036

 

IRLB3036 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLB3036
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 380 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 270 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 91 nC
   trⓘ - Время нарастания: 220 ns
   Cossⓘ - Выходная емкость: 1020 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRLB3036

 

 

IRLB3036 Datasheet (PDF)

 ..1. Size:284K  international rectifier
 irlb3036pbf.pdf

IRLB3036 IRLB3036

PD - 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 ..2. Size:251K  inchange semiconductor
 irlb3036.pdf

IRLB3036 IRLB3036

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 0.1. Size:294K  international rectifier
 irlb3036gpbf.pdf

IRLB3036 IRLB3036

PD - 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 0.2. Size:250K  international rectifier
 auirlb3036.pdf

IRLB3036 IRLB3036

AUTOMOTIVE GRADEAUIRLB3036HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS 60Vl Ultra Low On-ResistanceRDS(on) typ.1.9ml Logic Level Gate Drivemax. 2.4ml Dynamic dv/dt RatingGID (Silicon Limited)l 175C Operating Temperature 270Al Fast SwitchingID (Package Limited)S 195Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compli

 7.1. Size:291K  international rectifier
 irlb3034pbf.pdf

IRLB3036 IRLB3036

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

 7.2. Size:291K  infineon
 irlb3034pbf.pdf

IRLB3036 IRLB3036

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

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