IRLB3813 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLB3813
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 260 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 1620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00195 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRLB3813

IRLB3813 Datasheet (PDF)

..1. Size:243K international rectifier
irlb3813pbf.pdf

PD - 97407IRLB3813PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Isolated DC-DC1.95m30V @VGS = 10V57nC Converters with Synchronous Rectification for Telecom and Industrial Usel Power Tools DBenefitsSDl Very Low RDS(on) at 4.5V VGSGl Ultra-Low Gate ImpedanceTO-220ABl Fully Charact

..2. Size:243K infineon
irlb3813pbf.pdf

..3. Size:246K inchange semiconductor
irlb3813.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3813IIRLB3813FEATURESStatic drain-source on-resistance:RDS(on) 1.95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

9.1. Size:294K international rectifier
irlb3036gpbf.pdf

PD - 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

9.2. Size:284K international rectifier
irlb3036pbf.pdf

PD - 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

9.3. Size:250K international rectifier
auirlb3036.pdf

AUTOMOTIVE GRADEAUIRLB3036HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS 60Vl Ultra Low On-ResistanceRDS(on) typ.1.9ml Logic Level Gate Drivemax. 2.4ml Dynamic dv/dt RatingGID (Silicon Limited)l 175C Operating Temperature 270Al Fast SwitchingID (Package Limited)S 195Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compli

9.4. Size:291K international rectifier
irlb3034pbf.pdf

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

9.5. Size:291K infineon
irlb3034pbf.pdf

9.6. Size:251K inchange semiconductor
irlb3036.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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