IRLB3813
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLB3813
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 230
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35
V
|Id|ⓘ - Maximum Drain Current: 260
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 57
nC
trⓘ - Rise Time: 170
nS
Cossⓘ -
Output Capacitance: 1620
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00195
Ohm
Package:
TO220AB
IRLB3813
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLB3813
Datasheet (PDF)
..1. Size:243K international rectifier
irlb3813pbf.pdf 
PD - 97407IRLB3813PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Isolated DC-DC1.95m30V @VGS = 10V57nC Converters with Synchronous Rectification for Telecom and Industrial Usel Power Tools DBenefitsSDl Very Low RDS(on) at 4.5V VGSGl Ultra-Low Gate ImpedanceTO-220ABl Fully Charact
..2. Size:243K infineon
irlb3813pbf.pdf
PD - 97407IRLB3813PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Isolated DC-DC1.95m30V @VGS = 10V57nC Converters with Synchronous Rectification for Telecom and Industrial Usel Power Tools DBenefitsSDl Very Low RDS(on) at 4.5V VGSGl Ultra-Low Gate ImpedanceTO-220ABl Fully Charact
..3. Size:246K inchange semiconductor
irlb3813.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3813IIRLB3813FEATURESStatic drain-source on-resistance:RDS(on) 1.95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI
9.1. Size:294K international rectifier
irlb3036gpbf.pdf
PD - 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive
9.2. Size:284K international rectifier
irlb3036pbf.pdf
PD - 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive
9.3. Size:250K international rectifier
auirlb3036.pdf
AUTOMOTIVE GRADEAUIRLB3036HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS 60Vl Ultra Low On-ResistanceRDS(on) typ.1.9ml Logic Level Gate Drivemax. 2.4ml Dynamic dv/dt RatingGID (Silicon Limited)l 175C Operating Temperature 270Al Fast SwitchingID (Package Limited)S 195Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compli
9.4. Size:291K international rectifier
irlb3034pbf.pdf
PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel
9.5. Size:291K infineon
irlb3034pbf.pdf
PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel
9.6. Size:251K inchange semiconductor
irlb3036.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU
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