IRLR3636 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR3636
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 143 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 99 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 216 nS
Cossⓘ - Capacitancia de salida: 332 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de IRLR3636 MOSFET
- Selecciónⓘ de transistores por parámetros
IRLR3636 datasheet
irlr3636pbf irlu3636pbf.pdf
PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level
irlu3636pbf irlr3636pbf.pdf
PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level
irlr3636.pdf
isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V
auirlr3636.pdf
AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C
irlr3636trpbf.pdf
IRLR3636TRPBF www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25
irlr3715.pdf
PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
auirlr3410trl.pdf
PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica
irlu3103pbf irlr3103pbf.pdf
PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing
irlr3715zcpbf irlu3715zcpbf.pdf
PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pa
irlr3714 irlu3714.pdf
PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
irlr3717pbf irlu3717pbf.pdf
PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
auirlr3915.pdf
PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R
irlr3105pbf irlu3105pbf.pdf
PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature Fast Switching RDS(on) = 0.037 G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 25A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie
irlu3715pbf irlr3715pbf.pdf
PD - 95555A SMPS MOSFET IRLR3715PbF IRLU3715PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
irlr3103pbf irlu3103pbf.pdf
PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing
irlr3410pbf irlu3410pbf.pdf
PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
irlr3110zpbf irlu3110zpbf.pdf
PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to
irlr3715z.pdf
PD - 94650A IRLR3715Z IRLU3715Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l Fully Characteriz
irlu3714pbf irlr3714pbf.pdf
PD - 95554A IRLR3714PbF SMPS MOSFET IRLU3714PbF HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
irlu3303pbf irlr3303pbf.pdf
PD- 95086A IRLR/U3303PbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Ultra Low On-Resistance VDSS = 30V l Surface Mount (IRLR3303) l Straight Lead (IRLU3303) RDS(on) = 0.031 l Advanced Process Technology G l Fast Switching l Fully Avalanche Rated ID = 35A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t
irlr3802pbf irlu3802pbf.pdf
PD - 95089A IRLR3802PbF IRLU3802PbF HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Point- VDSS RDS(on) max Qg of-Load Synchronous Buck Converters 12V 8.5m 27nC l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D-Pak I-
irlu3114zpbf irlr3114zpbf.pdf
PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance
irlr3303.pdf
PD- 91316F IRLR/U3303 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3303) Straight Lead (IRLU3303) RDS(on) = 0.031 G Advanced Process Technology Fast Switching ID = 35A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the l
irlr3410.pdf
PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive D Ultra Low On-Resistance VDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410) RDS(on) = 0.105 Advanced Process Technology G Fast Switching ID = 17A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the
irlr3103.pdf
PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3103) Straight Lead (IRLU3103) RDS(on) = 0.019 Advanced Process Technology G Fast Switching ID = 55A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the
irlr3114zpbf irlu3114zpbf.pdf
PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance
irlu3717pbf irlr3717pbf.pdf
PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
irlr3705zpbf irlu3705zpbf.pdf
PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel
irlu3110zpbf irlr3110zpbf.pdf
PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to
irlu3715zpbf irlr3715zpbf.pdf
PD - 95088A IRLR3715ZPbF IRLU3715ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits D-Pak I-Pak l Ultra-Low Gate Impedance IRLR3715Z IRLU3715Z l Fully Cha
irlr3105.pdf
PD - 94510B IRLR3105 AUTOMOTIVE MOSFET IRLU3105 HEXFET Power MOSFET Features D l Logic-Level Gate Drive VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 0.037 l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 25A S Description Specifically designed for Automotive applications, this HEXFET Power
irlr3714.pdf
PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
irlu3410pbf irlr3410pbf.pdf
PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
auirlr3705ztr.pdf
PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv
auirlr3105.pdf
PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A
irlr3915pbf irlu3915pbf.pdf
PD - 95090B IRLR3915PbF IRLU3915PbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m Lead-Free G Description ID = 30A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista
irlu3714zpbf irlr3714zpbf.pdf
PD - 95775A IRLR3714ZPbF IRLU3714ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 15m 4.7nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
irlr3915.pdf
PD - 94543 AUTOMOTIVE MOSFET IRLR3915 IRLU3915 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m G Description ID = 30A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the
irlr3715 irlu3715.pdf
PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
irlr3802.pdf
PD - 94536 IRLR3802 IRLU3802 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Point- VDSS RDS(on) max Qg of-Load Synchronous Buck Converters 12V 8.5m 27nC l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR3802 IRLU38
auirlr3410.pdf
AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175 C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D
auirlr3110z auirlu3110z.pdf
AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
auirlr3114z auirlu3114z.pdf
AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
auirlr3705z.pdf
AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali
irlr3110zpbf.pdf
IRLR3110ZPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 100 % Rg Tested 0.0075 at VGS = 10 V 85 100 100 % UIS Tested 0.0095 at VGS = 4.5 V 75 APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25
irlr3105tr.pdf
IRLR3105TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no
irlr3410tr.pdf
IRLR3410TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING
irlr3705z.pdf
isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga
irlr3715z.pdf
isc N-Channel MOSFET Transistor IRLR3715Z, IIRLR3715Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
irlr3110z.pdf
isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Ga
irlr3717.pdf
isc N-Channel MOSFET Transistor IRLR3717, IIRLR3717 FEATURES Static drain-source on-resistance RDS(on) 4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 20 V DSS V Gate-S
irlr3303.pdf
isc N-Channel MOSFET Transistor IRLR3303,IIRLR3303 FEATURES Static drain-source on-resistance RDS(on) 31m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-S
irlr3410.pdf
isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410 FEATURES Static drain-source on-resistance RDS(on) 105m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat
irlr3103.pdf
isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103 FEATURES Static drain-source on-resistance RDS(on) 19m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-
irlr3114z.pdf
isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z FEATURES Static drain-source on-resistance RDS(on) 4.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gat
irlr3105.pdf
isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-
irlr3915.pdf
isc N-Channel MOSFET Transistor IRLR3915, IIRLR3915 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-
irlr3802.pdf
isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 12 V DSS V Gate
Otros transistores... IRLML6346 , IRLP3034 , IRLR024Z , IRLR2905Z , IRLR2908 , IRLR3105 , IRLR3110Z , IRLR3114Z , SPP20N60C3 , IRLR3705Z , IRLR3714Z , IRLR3715Z , IRLR3715ZC , IRLR3717 , IRLR3802 , IRLR3915 , IRLR6225 .
History: 2SK293 | SMK0825FC | SM6012NSUB
History: 2SK293 | SMK0825FC | SM6012NSUB
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