PD - 96224IRLR3636PbFIRLU3636PbFApplicationsl DC Motor DriveHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS 60Vl High Speed Power SwitchingRDS(on) typ.5.4ml Hard Switched and High Frequency Circuits max. 6.8mGID (Silicon Limited)99ABenefitsID (Package Limited)50ASl Optimized for Logic Level

PD - 96224IRLR3636PbFIRLU3636PbFApplicationsl DC Motor DriveHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS 60Vl High Speed Power SwitchingRDS(on) typ.5.4ml Hard Switched and High Frequency Circuits max. 6.8mGID (Silicon Limited)99ABenefitsID (Package Limited)50ASl Optimized for Logic Level

isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636FEATURESStatic drain-source on-resistance:RDS(on)6.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 V

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C

IRLR3636TRPBFwww.VBsemi.twN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120ID (A) 97Configuration SingleDTO-252GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

PD - 94177SMPS MOSFETIRLR3715IRLU3715HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage

PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica

PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

PD - 96053IRLR3715ZCPbFIRLU3715ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Ultra-Low Gate Impedancel Fully Characterized Avalanche VoltageD-Pa

PD - 94266IRLR3714SMPS MOSFETIRLU3714HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag

PD - 97743AUTOMOTIVE GRADEAUIRLR3915FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.12ml 175C Operating Temperaturel Fast Switchingmax 14mGl Fully Avalanche RatedID (Silicon Limited)61Al Repetitive Avalanche AllowedSup to Tjmax ID (Package Limited)30Al Lead-Free, R

PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie

PD - 95555ASMPS MOSFETIRLR3715PbFIRLU3715PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak I-Pak

PD - 94650AIRLR3715ZIRLU3715ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl Fully Characteriz

PD - 95554AIRLR3714PbFSMPS MOSFETIRLU3714PbFHEXFET Power MOSFETApplicationsl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSD-Pak I-Pak

PD- 95086AIRLR/U3303PbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-ResistanceVDSS = 30Vl Surface Mount (IRLR3303)l Straight Lead (IRLU3303)RDS(on) = 0.031l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche RatedID = 35ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t

PD - 95089AIRLR3802PbFIRLU3802PbFHEXFET Power MOSFETApplicationsl High Frequency 3.3V and 5V input Point-VDSS RDS(on) max Qgof-Load Synchronous Buck Converters12V 8.5m 27nCl Power Management for Netcom,Computing and Portable Applications.l Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)l Fully Characterized Avalanche Voltageand Current D-Pak I-

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

PD- 91316FIRLR/U3303HEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3303) Straight Lead (IRLU3303)RDS(on) = 0.031G Advanced Process Technology Fast SwitchingID = 35A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the l

PD - 91607BIRLR/U3410HEXFET Power MOSFET Logic Level Gate DriveD Ultra Low On-ResistanceVDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410)RDS(on) = 0.105 Advanced Process TechnologyG Fast SwitchingID = 17A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve the

PD - 91333EIRLR/U3103HEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-ResistanceVDSS = 30V Surface Mount (IRLR3103) Straight Lead (IRLU3103)RDS(on) = 0.019 Advanced Process TechnologyG Fast SwitchingID = 55A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve the

PD - 95776AIRLR3717PbFIRLU3717PbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl

PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel

PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to

PD - 95088AIRLR3715ZPbFIRLU3715ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsD-Pak I-Pakl Ultra-Low Gate ImpedanceIRLR3715Z IRLU3715Zl Fully Cha

PD - 94510BIRLR3105AUTOMOTIVE MOSFETIRLU3105HEXFET Power MOSFETFeaturesDl Logic-Level Gate DriveVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 0.037l 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 25ASDescriptionSpecifically designed for Automotive applications, this HEXFET Power

PD - 94266IRLR3714SMPS MOSFETIRLU3714HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag

PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv

PD - 97703AAUTOMOTIVE GRADEAUIRLR3105FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55V Dynamic dV/dT Ratingl Low On-ResistanceRDS(on) typ.30ml 175C Operating TemperatureG max 37ml Fast Switchingl Fully Avalanche RatedSID25Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS CompliantDl A

PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

PD - 95775AIRLR3714ZPbFIRLU3714ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power 20V 15m 4.7nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl

PD - 94543AUTOMOTIVE MOSFET IRLR3915IRLU3915FeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14mGDescriptionID = 30ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the

PD - 94177SMPS MOSFETIRLR3715IRLU3715HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage

PD - 94536IRLR3802IRLU3802HEXFET Power MOSFETApplicationsl High Frequency 3.3V and 5V input Point-VDSS RDS(on) max Qgof-Load Synchronous Buck Converters12V 8.5m 27nCl Power Management for Netcom,Computing and Portable Applications.Benefitsl Ultra-Low Gate Impedancel Very Low RDS(on)l Fully Characterized Avalanche Voltageand Current D-Pak I-PakIRLR3802 IRLU38

PD - 95776AIRLR3717PbFIRLU3717PbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl

PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie

PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec

PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

IRLR3110ZPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 100 % Rg Tested0.0075 at VGS = 10 V85100 100 % UIS Tested0.0095 at VGS = 4.5 V75APPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252 D G G D S S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25

IRLR3105TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

IRLR3410TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705ZFEATURESStatic drain-source on-resistance:RDS(on)8.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga

isc N-Channel MOSFET Transistor IRLR3715Z, IIRLR3715ZFEATURESStatic drain-source on-resistance:RDS(on)11mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110ZFEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Ga

isc N-Channel MOSFET Transistor IRLR3717, IIRLR3717FEATURESStatic drain-source on-resistance:RDS(on)4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 20 VDSSV Gate-S

isc N-Channel MOSFET Transistor IRLR3303,IIRLR3303FEATURESStatic drain-source on-resistance:RDS(on)31mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-S

isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410FEATURESStatic drain-source on-resistance:RDS(on)105mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103FEATURESStatic drain-source on-resistance:RDS(on)19mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114ZFEATURESStatic drain-source on-resistance:RDS(on)4.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gat

isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105FEATURESStatic drain-source on-resistance:RDS(on)37mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

isc N-Channel MOSFET Transistor IRLR3915, IIRLR3915FEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802FEATURESStatic drain-source on-resistance:RDS(on)8.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 12 VDSSV Gate